? semiconductor components industries, llc, 2013 august, 2013 ? rev. 7 1 publication order number: mmjt350t1/d mmjt350t1g bipolar power transistors pnp silicon bipolar power transistors are designed for use in line ? operated applications such as low power, line ? operated series pass and switching regulators requiring pnp capability. features ? high collector ? emitter sustaining voltage ? excellent dc current gain ? epoxy meets ul 94 v ? 0 @ 0.125 in ? s prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com device package shipping ? ordering information schematic c 2,4 b 1 e 3 0.5 ampere power transistor pnp silicon 300 volts, 2.75 watts mmjt350t1g sot ? 223 (pb ? free) 1,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. sot ? 223 case 318e style 1 a = assembly location y = year w = work week = pb ? free package t350 = device code marking diagram (note: microdot may be in either location) ayw t350 smmjt350t1g sot ? 223 (pb ? free) 1,000 / tape & reel 1 2 3 4
mmjt350t1g http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ???????????????????????? ???????????????????????? rating ???? ???? ????? ????? ??? ??? ???????????????????????? ???????????????????????? collector ? emitter voltage ???? ???? ????? ????? ??? ??? ???????????????????????? ???????????????????????? ???????????????????????? ? base voltage ???? ???? ???? ????? ????? ????? ??? ??? ??? ???????????????????????? ???????????????????????? ? base voltage ???? ???? ????? ????? ??? ??? ???????????????????????? ???????????????????????? ???????????????????????? ? continuous ???? ???? ???? ????? ????? ????? ??? ??? ??? ???????????????????????? ???????????????????????? ? peak ???? ???? ????? ????? ??? ??? ???????????????????????? ???????????????????????? ???????????????????????? ???????????????????????? ???????????????????????? c derate above 25 c total p d @ t a = 25 c mounted on 1? sq. (645 sq. mm) collector pad on fr ? 4 bd material to t a l p d @ t a = 25 c mounted on 0.012? sq. (7.6 sq. mm) collector pad on fr ? 4 bd material ???? ???? ???? ???? ???? ????? ????? ????? ????? ????? ??? ??? ??? ??? ??? c w w ???????????????????????? ???????????????????????? ???? ???? ????? ????? ??? ??? c ???????????????????????? ???????????????????????? ???????????????????????? ? human body model ???? ???? ???? ????? ????? ????? ??? ??? ??? ???????????????????????? ???????????????????????? ? machine model ???? ???? ????? ????? ??? ??? ????????????????????????????????? ????????????????????????????????? thermal characteristics ?????????????????????? ?????????????????????? ????? ????? ????? ????? ???? ???? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? thermal resistance junction ? to ? case junction ? to ? ambient on 1? sq. (645 sq. mm) collector pad on fr ? 4 bd material junction ? to ? ambient on 0.012? sq. (7.6 sq. mm) collector pad on fr ? 4 bd material ????? ????? ????? ????? ????? jc r ja r ja ????? ????? ????? ????? ????? ???? ???? ???? ???? ???? c/w ?????????????????????? ?????????????????????? ????? ????? ????? ????? ???? ???? c electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter sustaining voltage (i c = 1.0 madc, i b = 0 adc) v ceo(sus ) 300 ? vdc collector ? base current (v cb = rated v cbo , v eb = 0) i cbo ? 100 nadc emitter cut ? off current (v be = 5.0 vdc) i ebo ? 100 nadc on characteristics dc current gain (i c = 50 madc, v ce = 10 vdc) (i c = 100 madc, v ce = 10 vdc) h fe 30 20 240 ? ?
mmjt350t1g http://onsemi.com 3 v , temperature coefficients (mv/ c) i c , collector current (ma) h fe , dc current gain 200 7.0 20 5.0 50 30 10 10 50 100 30 25 c t j = 150 c -55 c figure 1. dc current gain 100 20 70 200 500 300 70 v ce = 2.0 v v cc = 10 v figure 2. ?on? voltages 1.0 i c , collector current (ma) 0.8 0.2 0 t j = 25 c v, voltage (volts) v be(sat) @ i c /i b = 10 v be @ v ce = 10 v 0.6 0.4 v ce(sat) 7.0 20 5.0 10 50 100 30 200 500 300 70 i c /i b = 10 i c /i b = 5.0 1000 v ce , collector-emitter voltage (volts) 70 300 10 50 bonding wire limited thermally limited @ t c = 25 c second breakdown limited figure 3. active ? region safe operating area 1.0ms dc 700 200 100 50 20 t j = 150 c i c , collector current (ma) 100 300 500 30 100 s 400 30 70 200 20 500 s +1.2 i c , collector current (ma) 70 figure 4. temperature coefficients 50 30 10 5.0 500 7.0 20 +0.8 +0.4 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 100 200 300 *applies for i c /i b < h fe/4 * vc for v ce(sat) vb for v be +100 c to +150 c +25 c to +100 c -55 c to +25 c +25 c to +150 c -55 c to +25 c there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 3 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure 5. power derating 150 25 t, temperature ( c) 4.0 3.0 2.0 1.0 0 p 50 , power dissipation (watts) d 75 100 125 t a t c
mmjt350t1g http://onsemi.com 4 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? style 1: pin 1. base 2. collector 3. emitter 4. collector *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mmjt350t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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